Abstract
The temperature dependence of threshold current in a 1.3 μm InGaAsN vertical-cavity surface-emitting lasers (VCSEL) was analyzed to determine the senstivity of laser performance to temperature variations. A tunnel junction was introduced at an antinode of the optical cavity field to accomodate the unipolar mirrors composed to Si-doped quarter-wavelength layers. The mirror reflectivities and internal losses were considered to estimate the threshold gain of the modeled device. The analysis suggested that inclusion of macroscopic Coulomb scattering instead of phenomenological relaxation rate to compute gain spectra improved the predictive capability.
| Original language | English (US) |
|---|---|
| Pages | 135-136 |
| Number of pages | 2 |
| State | Published - 2001 |
| Externally published | Yes |
| Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001 |
Other
| Other | Conference on Lasers and Electro-Optics (CLEO) |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 5/6/01 → 5/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
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