Temperature dependence of ion beam mixing of InGaAs marker layers in GaAs

D. V. Forbes, J. J. Coleman, J. L. Klatt, Robert S Averback

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion beam mixing of In0.20Ga0.80As quantum well marker layers in GaAs following 1MeV Kr ion irradiation has been measured as a function of irradiation temperature and fluence. Secondary Ion Mass Spectrometry (SIMS) was used to measure the diffusion of the In0.20Ga0.80As layer following irradiation at various temperatures. Rutherford Backscattering (RBS) and channeling methods were used to determine the extent of the amorphization as a result of the implantation. The mixing parameter of the In0.20Ga0.80As in the GaAs matrix increased from approximately 120 angstroms5/eV at 77 K to approximately 160 angstroms5/eV in the temperature range of 300 K-450 K, but decreased somewhat at 573 K. This behavior of In0.20Ga0.80As marker layers will be compared to AlAs marker layers which show similar temperature dependence. These results are interpreted on the basis of thermal spikes and crystal structure.

Original languageEnglish (US)
Title of host publicationThermodynamics and Kinetics
PublisherPubl by Materials Research Society
Pages227-232
Number of pages6
ISBN (Print)1558992073
StatePublished - Jan 1 1993
EventProceedings of the Symposium on Phase Transformations in Thin Films - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume311
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Phase Transformations in Thin Films
CitySan Francisco, CA, USA
Period4/13/934/15/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Forbes, D. V., Coleman, J. J., Klatt, J. L., & Averback, R. S. (1993). Temperature dependence of ion beam mixing of InGaAs marker layers in GaAs. In Thermodynamics and Kinetics (pp. 227-232). (Materials Research Society Symposium Proceedings; Vol. 311). Publ by Materials Research Society.