Temperature dependence of ion-beam mixing in III-V semiconductors

D. V. Forbes, J. J. Coleman, J. L. Klatt, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Ion-beam mixing in AlxGa1-xAs and InP matrices was measured as a function of irradiation temperature using 1 MeV Kr ion irradiation. For these III-V compound semiconductors, the mixing increased with temperature up to a critical temperature Tc at which point it precipitously dropped. Tc was identified as the amorphous-to- crystalline transition temperature in these materials under 1 MeV Kr irradiation.

Original languageEnglish (US)
Pages (from-to)3543-3545
Number of pages3
JournalJournal of Applied Physics
Volume77
Issue number7
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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