Ion-beam mixing in AlxGa1-xAs and InP matrices was measured as a function of irradiation temperature using 1 MeV Kr ion irradiation. For these III-V compound semiconductors, the mixing increased with temperature up to a critical temperature Tc at which point it precipitously dropped. Tc was identified as the amorphous-to- crystalline transition temperature in these materials under 1 MeV Kr irradiation.
ASJC Scopus subject areas
- Physics and Astronomy(all)