Abstract
Ion-beam mixing in AlxGa1-xAs and InP matrices was measured as a function of irradiation temperature using 1 MeV Kr ion irradiation. For these III-V compound semiconductors, the mixing increased with temperature up to a critical temperature Tc at which point it precipitously dropped. Tc was identified as the amorphous-to- crystalline transition temperature in these materials under 1 MeV Kr irradiation.
Original language | English (US) |
---|---|
Pages (from-to) | 3543-3545 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 77 |
Issue number | 7 |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- General Physics and Astronomy