Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å5/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å5/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å5/eV between 110 and 473 K, but it increased to ≊120 Å5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å5/eV, but only 250 Å5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å5/eV while it decreased at 473 K at the other interface to 110 Å5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)