Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

J. L. Klatt, R. S. Averback, D. V. Forbes, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

Abstract

Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å5/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å5/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å5/eV between 110 and 473 K, but it increased to ≊120 Å5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å5/eV, but only 250 Å5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å5/eV while it decreased at 473 K at the other interface to 110 Å5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

Original languageEnglish (US)
Pages (from-to)976-978
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number7
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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