Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

J. L. Klatt; R. S. Averback; D. V. Forbes; J. J. Coleman

doi:10.1063/1.109863

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

J. L. Klatt, R. S. Averback, D. V. Forbes, J. J. Coleman

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Abstract

Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å⁵/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å⁵/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å⁵/eV between 110 and 473 K, but it increased to ≊120 Å⁵/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å⁵/eV, but only 250 Å⁵/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å⁵/eV while it decreased at 473 K at the other interface to 110 Å⁵/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

Original language	English (US)
Pages (from-to)	976-978
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	7
DOIs	https://doi.org/10.1063/1.109863
State	Published - 1993

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Physics and Astronomy (miscellaneous)

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@article{b647f0855dd947ab8b050d0672e340a0,

title = "Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs",

abstract = "Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 {\AA}5/eV at temperatures between 110 and 473 K, but dropped to ≊120 {\AA}5/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 {\AA}5/eV between 110 and 473 K, but it increased to ≊120 {\AA}5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 {\AA}5/eV, but only 250 {\AA}5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 {\AA}5/eV while it decreased at 473 K at the other interface to 110 {\AA}5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.",

author = "Klatt, {J. L.} and Averback, {R. S.} and Forbes, {D. V.} and Coleman, {J. J.}",

year = "1993",

doi = "10.1063/1.109863",

language = "English (US)",

volume = "63",

pages = "976--978",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

AU - Klatt, J. L.

AU - Averback, R. S.

AU - Forbes, D. V.

AU - Coleman, J. J.

PY - 1993

Y1 - 1993

N2 - Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å5/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å5/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å5/eV between 110 and 473 K, but it increased to ≊120 Å5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å5/eV, but only 250 Å5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å5/eV while it decreased at 473 K at the other interface to 110 Å5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

AB - Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å5/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å5/ eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å5/eV between 110 and 473 K, but it increased to ≊120 Å5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å5/eV, but only 250 Å5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å5/eV while it decreased at 473 K at the other interface to 110 Å5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

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U2 - 10.1063/1.109863

DO - 10.1063/1.109863

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SN - 0003-6951

VL - 63

SP - 976

EP - 978

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

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