Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

David A. Ahmari, Gopal Raghavan, Quesnell J. Hartmann, Michael L. Hattendorf, Milton Feng, Gregory E. Stillman

Research output: Contribution to journalArticlepeer-review

Abstract

This work describes the temperature dependence of the dc and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both dc and high-frequency parameters are presented. An HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in fT with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined.

Original languageEnglish (US)
Pages (from-to)634-640
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume46
Issue number4
DOIs
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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