Abstract
The influence of the specimen temperature during MeV Kr irradiation on the extent of compositional disordering in GaAs-AlAs superlattices has been determined. For low-temperature irradiations (133233 K), complete intermixing of the superlattice is observed. However, the mixing efficiency decreases with increasing specimen temperature between room temperature and 523 K. These results suggest the existence of a miscibility gap in the coherent-phase diagram of GaAs-AlAs superlattices with a critical temperature greater than 523 K.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3889-3892 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 41 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1990 |
ASJC Scopus subject areas
- Condensed Matter Physics