Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

M. Feng, N. Holonyak, A. James

Research output: Contribution to journalArticle

Abstract

Data are presented on the thermal behavior of a high performance 1 μm wide stripe quantum-well (QW) transistor laser in continuous-wave single-mode operation up to 40 °C, multimode to 55 °C. The electrical and optical outputs of the TL are found to be complementary across temperature, directly correlated with the spontaneous and stimulated radiative recombination process. The QW transistor laser operates on two states, lower and upper, at two characteristic temperatures, T0 (ITH = I0 exp (T/ T 0)). On the lower state transition, T00 =40 K, and on the upper state, T01 =70 K, the difference in performance and speed (bandwidth) connected directly to the different recombination lifetimes on each state and the confining barrier heights of the lower 0〉 and upper state 1〉.

Original languageEnglish (US)
Article number051107
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - Jan 31 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser'. Together they form a unique fingerprint.

  • Cite this