Temperature- and size-dependent characteristics in ultrathin inorganic light-emitting diodes assembled by transfer printing

Tae Il Kim, Soo Hyun Lee, Yuhang Li, Yan Shi, Gunchul Shin, Sung Dan Lee, Yonggang Huang, John A. Rogers, Jae Su Yu

Research output: Contribution to journalArticle

Abstract

Favorable temperature- and size-dependent device characteristics in mechanically flexible, thin (∼6.45μm thick), microscale inorganic InGaN/GaN-based light-emitting diodes enable their use as highly efficient, robust devices that are capable of integration on diverse classes of unconventional substrates, including sheets of plastic. Finite element analysis and systematic studies of the operational properties establish important thermal, electrical, and optical considerations for this type of device.

Original languageEnglish (US)
Article number051901
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - Jan 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Kim, T. I., Hyun Lee, S., Li, Y., Shi, Y., Shin, G., Lee, S. D., Huang, Y., Rogers, J. A., & Su Yu, J. (2014). Temperature- and size-dependent characteristics in ultrathin inorganic light-emitting diodes assembled by transfer printing. Applied Physics Letters, 104(5), [051901]. https://doi.org/10.1063/1.4863856