Abstract
The temperature dependence of threshold current Ith in vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation Ith(T) = α + β(T -Tmin)2, where Tmin is the temperature of lowest Ith, α and β are parameters, and temperature is T. We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient β is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. The incorporation of strain-compensated high-barrier GaAsP layers in the active region of 980-nm VCSELs is demonstrated to reduce the threshold dependence on temperature.
Original language | English (US) |
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Article number | 01703699 |
Pages (from-to) | 1078-1083 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 42 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2006 |
Keywords
- Diode lasers
- Temperature analysis
- Threshold current
- Vertical-cavity surface-emitting lasers (VCSELs)
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering