Temperature analysis of threshold current in infrared vertical-cavity surface-emitting lasers

Chen Chen, Paul O. Leisher, Andrew A. Allerman, Kent M. Geib, Kent D. Choquette

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence of threshold current Ith in vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation Ith(T) = α + β(T -Tmin)2, where Tmin is the temperature of lowest Ith, α and β are parameters, and temperature is T. We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient β is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. The incorporation of strain-compensated high-barrier GaAsP layers in the active region of 980-nm VCSELs is demonstrated to reduce the threshold dependence on temperature.

Original languageEnglish (US)
Article number01703699
Pages (from-to)1078-1083
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume42
Issue number10
DOIs
StatePublished - Oct 1 2006

Keywords

  • Diode lasers
  • Temperature analysis
  • Threshold current
  • Vertical-cavity surface-emitting lasers (VCSELs)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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