TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper

P. J. Shang; Z. Q. Liu; L. Zhang; D. X. Li; J. K. Shang

doi:10.1109/ICEPT.2007.4441534

TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper

P. J. Shang, Z. Q. Liu, L. Zhang, D. X. Li, J. K. Shang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The interfacial reaction between eutectic SnBi and Cu was studied by TEM after the sample was reflowed and aged in solid state, respectively. The microstructural evolution at the SnBi/Cu interface during reflowed and solid-state aged process was analyzed. The results show that there are two layers of intermetallic compounds (IMCs), Cu3Sn and Cu6Sn5, located at the interface between solder and Cu after the sample was reflowed. The segregation of Bi at the interface between Cu3Sn and Cu was observed. Furthermore, the segregation of Bi induced the formation of voids at Cu3 Sn/Cu interface during solid-state aging process.

Original language	English (US)
Title of host publication	Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT
DOIs	https://doi.org/10.1109/ICEPT.2007.4441534
State	Published - 2007
Externally published	Yes
Event	2007 8th International Conference on Electronic Packaging Technology, ICEPT - Shanghai, China Duration: Aug 14 2007 → Aug 17 2007

Publication series

Name	Proceedings of the Electronic Packaging Technology Conference, EPTC

Other

Other	2007 8th International Conference on Electronic Packaging Technology, ICEPT
Country/Territory	China
City	Shanghai
Period	8/14/07 → 8/17/07

ASJC Scopus subject areas

General Engineering

Online availability

10.1109/ICEPT.2007.4441534

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Shang, P. J., Liu, Z. Q., Zhang, L., Li, D. X., & Shang, J. K. (2007). TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper. In Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT Article 4441534 (Proceedings of the Electronic Packaging Technology Conference, EPTC). https://doi.org/10.1109/ICEPT.2007.4441534

TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper. / Shang, P. J.; Liu, Z. Q.; Zhang, L. et al.
Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT. 2007. 4441534 (Proceedings of the Electronic Packaging Technology Conference, EPTC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shang, PJ, Liu, ZQ, Zhang, L, Li, DX & Shang, JK 2007, TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper. in Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT., 4441534, Proceedings of the Electronic Packaging Technology Conference, EPTC, 2007 8th International Conference on Electronic Packaging Technology, ICEPT, Shanghai, China, 8/14/07. https://doi.org/10.1109/ICEPT.2007.4441534

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title = "TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper",

abstract = "The interfacial reaction between eutectic SnBi and Cu was studied by TEM after the sample was reflowed and aged in solid state, respectively. The microstructural evolution at the SnBi/Cu interface during reflowed and solid-state aged process was analyzed. The results show that there are two layers of intermetallic compounds (IMCs), Cu3Sn and Cu6Sn5, located at the interface between solder and Cu after the sample was reflowed. The segregation of Bi at the interface between Cu3Sn and Cu was observed. Furthermore, the segregation of Bi induced the formation of voids at Cu3 Sn/Cu interface during solid-state aging process.",

author = "Shang, {P. J.} and Liu, {Z. Q.} and L. Zhang and Li, {D. X.} and Shang, {J. K.}",

year = "2007",

doi = "10.1109/ICEPT.2007.4441534",

language = "English (US)",

isbn = "1424413923",

series = "Proceedings of the Electronic Packaging Technology Conference, EPTC",

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note = "2007 8th International Conference on Electronic Packaging Technology, ICEPT ; Conference date: 14-08-2007 Through 17-08-2007",

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T1 - TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper

AU - Shang, P. J.

AU - Liu, Z. Q.

AU - Zhang, L.

AU - Li, D. X.

AU - Shang, J. K.

PY - 2007

Y1 - 2007

N2 - The interfacial reaction between eutectic SnBi and Cu was studied by TEM after the sample was reflowed and aged in solid state, respectively. The microstructural evolution at the SnBi/Cu interface during reflowed and solid-state aged process was analyzed. The results show that there are two layers of intermetallic compounds (IMCs), Cu3Sn and Cu6Sn5, located at the interface between solder and Cu after the sample was reflowed. The segregation of Bi at the interface between Cu3Sn and Cu was observed. Furthermore, the segregation of Bi induced the formation of voids at Cu3 Sn/Cu interface during solid-state aging process.

AB - The interfacial reaction between eutectic SnBi and Cu was studied by TEM after the sample was reflowed and aged in solid state, respectively. The microstructural evolution at the SnBi/Cu interface during reflowed and solid-state aged process was analyzed. The results show that there are two layers of intermetallic compounds (IMCs), Cu3Sn and Cu6Sn5, located at the interface between solder and Cu after the sample was reflowed. The segregation of Bi at the interface between Cu3Sn and Cu was observed. Furthermore, the segregation of Bi induced the formation of voids at Cu3 Sn/Cu interface during solid-state aging process.

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TEM study of Bi segregation in the interconnect of eutectic tin-bismuth solder and copper

Abstract

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