Abstract
This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting |
| Publisher | Publ by IEEE |
| Pages | 213-214 |
| Number of pages | 2 |
| ISBN (Print) | 0780312635 |
| State | Published - 1993 |
| Event | Annual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA Duration: Nov 15 1993 → Nov 18 1993 |
Other
| Other | Annual Meeting of the IEEE Lasers and Electro-Optics Society |
|---|---|
| City | San jose, CA, USA |
| Period | 11/15/93 → 11/18/93 |
ASJC Scopus subject areas
- Engineering(all)