System-level considerations for OEIC photoreceiver design

J. J. Morikuni, M. Tong, A. A. Ketterson, K. Nummila, S. M. Kang, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherPubl by IEEE
Pages213-214
Number of pages2
ISBN (Print)0780312635
StatePublished - 1993
EventAnnual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA
Duration: Nov 15 1993Nov 18 1993

Other

OtherAnnual Meeting of the IEEE Lasers and Electro-Optics Society
CitySan jose, CA, USA
Period11/15/9311/18/93

ASJC Scopus subject areas

  • Engineering(all)

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