System-level considerations for OEIC photoreceiver design

J. J. Morikuni; M. Tong; A. A. Ketterson; K. Nummila; S. M. Kang; I. Adesida

System-level considerations for OEIC photoreceiver design

J. J. Morikuni, M. Tong, A. A. Ketterson, K. Nummila, S. M. Kang, I. Adesida

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Publisher	Publ by IEEE
Pages	213-214
Number of pages	2
ISBN (Print)	0780312635
State	Published - 1993
Event	Annual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA Duration: Nov 15 1993 → Nov 18 1993

Other

Other	Annual Meeting of the IEEE Lasers and Electro-Optics Society
City	San jose, CA, USA
Period	11/15/93 → 11/18/93

ASJC Scopus subject areas

Engineering(all)

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Cite this

@inproceedings{fce4604ea8a047c7b20243a715ab34f2,

title = "System-level considerations for OEIC photoreceiver design",

abstract = "This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.",

author = "Morikuni, {J. J.} and M. Tong and Ketterson, {A. A.} and K. Nummila and Kang, {S. M.} and I. Adesida",

year = "1993",

language = "English (US)",

isbn = "0780312635",

pages = "213--214",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

publisher = "Publ by IEEE",

note = "Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 15-11-1993 Through 18-11-1993",

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TY - GEN

T1 - System-level considerations for OEIC photoreceiver design

AU - Morikuni, J. J.

AU - Tong, M.

AU - Ketterson, A. A.

AU - Nummila, K.

AU - Kang, S. M.

AU - Adesida, I.

PY - 1993

Y1 - 1993

N2 - This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

AB - This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

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M3 - Conference contribution

AN - SCOPUS:0027814615

SN - 0780312635

SP - 213

EP - 214

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

PB - Publ by IEEE

T2 - Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 15 November 1993 through 18 November 1993

ER -