Synthesis, structure, and thermal conductivity of [(SnSe)1 + y]n[MoSe2]n compounds 124007

Noel S. Gunning, Joseph Feser, Matthias Falmbigl, Matt Beekman, David G. Cahill, David C. Johnson

Research output: Contribution to journalArticle

Abstract

A series of semiconducting [(SnSe)1.05]n[MoSe2]n compounds where n = 1-4 were prepared from thin film precursors with designed local compositions and nanoarchitectures to promote formation of the desired products during low temperature annealing. Specular diffraction patterns of annealed precursors contain only 00l reflections that yield c-lattice parameters indicating the formation of layered intergrowths. The in-plane diffraction patterns contain the independent reflections from the two constituents and the in-plane lattice parameters are independent of n. Electron microscopy images suggest significant turbostratic disorder between the constituent layers and between Se-Mo-Se trilayers within the dichalcogenide constituent. The room temperature cross-plane thermal conductivity was found to be low, between 0.08 and 0.22 W m-1 K-1 for the series of isocompositional compounds investigated, and is independent of the density of interfaces.

Original languageEnglish (US)
Article number124007
JournalSemiconductor Science and Technology
Volume29
Issue number12
DOIs
StatePublished - Dec 1 2014

Keywords

  • Electrical conductivity
  • Layered compounds
  • Thermal conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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