Synthesis of Tantalum Pentoxide films for high temperature applications

Vaidyanathan Ravi Subramanian, Nicholas Ndiege, Mark A. Shannon, Edmund G. Seebauer, Richard I. Masel

Research output: Contribution to conferencePaper

Abstract

Thick Tantalum Pentoxide (Ta2O5) films have been prepared on silicon 〈100〉 and quartz substrates from sol-gel synthesized precursors using spin coating. The effects of sol aging, spin rate and binder in promoting formation of stable Ta2O5 films are discussed. We report, for the first time, films of 1.6μm thickness that can withstand temperature of up to 900°C for over 9 hours and still observed to be stable, uniform and crack-free. Optical properties of the nanoporous films indicate that these are good candidates for high temperature microdevice application such as waveguides.

Original languageEnglish (US)
Number of pages1
StatePublished - Dec 1 2005
Externally publishedYes
Event05AIChE: 2005 AIChE Annual Meeting and Fall Showcase - Cincinnati, OH, United States
Duration: Oct 30 2005Nov 4 2005

Other

Other05AIChE: 2005 AIChE Annual Meeting and Fall Showcase
CountryUnited States
CityCincinnati, OH
Period10/30/0511/4/05

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Subramanian, V. R., Ndiege, N., Shannon, M. A., Seebauer, E. G., & Masel, R. I. (2005). Synthesis of Tantalum Pentoxide films for high temperature applications. Paper presented at 05AIChE: 2005 AIChE Annual Meeting and Fall Showcase, Cincinnati, OH, United States.