Surfaces and interfaces for controlled defect engineering

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

Original languageEnglish (US)
Title of host publicationDoping Engineering for Front-End Processing
PublisherMaterials Research Society
Number of pages10
ISBN (Print)9781605110400
StatePublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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