TY - GEN
T1 - Surfaces and interfaces for controlled defect engineering
AU - Seebauer, Edmund G.
PY - 2008
Y1 - 2008
N2 - The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
AB - The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
UR - http://www.scopus.com/inward/record.url?scp=62949210582&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=62949210582&partnerID=8YFLogxK
U2 - 10.1557/proc-1070-e01-07
DO - 10.1557/proc-1070-e01-07
M3 - Conference contribution
AN - SCOPUS:62949210582
SN - 9781605110400
T3 - Materials Research Society Symposium Proceedings
SP - 25
EP - 34
BT - Doping Engineering for Front-End Processing
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 25 March 2008 through 27 March 2008
ER -