Surfaces and interfaces for controlled defect engineering

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

Original languageEnglish (US)
Title of host publicationDoping Engineering for Front-End Processing
Pages25-34
Number of pages10
StatePublished - Dec 1 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1070
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Seebauer, E. G. (2008). Surfaces and interfaces for controlled defect engineering. In Doping Engineering for Front-End Processing (pp. 25-34). (Materials Research Society Symposium Proceedings; Vol. 1070).