TY - GEN
T1 - Surfaces and interfaces for controlled defect engineering
AU - Seebauer, Edmund G.
PY - 2008
Y1 - 2008
N2 - The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
AB - The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
UR - http://www.scopus.com/inward/record.url?scp=60749127919&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60749127919&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734658
DO - 10.1109/ICSICT.2008.4734658
M3 - Conference contribution
AN - SCOPUS:60749127919
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 773
EP - 776
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -