Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide

Tilghman L. Rittenhouse, Paul W. Bohn, Tim K. Hossain, Ilesanmi Adesida, James Lindesay, Alfred Marcus

Research output: Contribution to journalArticlepeer-review

Abstract

The anodically etched porous silicon carbide (PSiC) was analyzed for blueshifted emission. Peak cathodoluminescence (CL) emission wavelengths in the ultraviolet were produced in the PSiC due to high etching current densities. Different emissive states were accessed in CL and photoluminescence (PL), as PL was also blueshifted but not to the extent of CL. The formation of new surface which harbored surface states responsible for the distinctive properties observed was also elaborated.

Original languageEnglish (US)
Pages (from-to)490-496
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number2
DOIs
StatePublished - Jan 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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