Abstract
A SEGREGATION MODEL IS PRESENTED WHICH ACCOUNTS FOR THE ACCUMULATION OF SN AT THE GROWING FILM SURFACE AND THE CORRESPONDING SN DEPLETION NEAR THE FILM-SUBSTRATE INTERFACE DURING THE DEPOSITION OF SN-DOPED GAAS BY MOLECULAR BEAM EPITAXY. CALCULATED SN PROFILES WERE FOUND TO PROVIDE A GOOD FIT TO EXPERIMENTAL DATA, OBTAINED BY SECONDARY ION MASS SPECTROMETRY.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7085-7087 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1982 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy