Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy

A. Rockett; T. J. Drummond; J. E. Greene; H. Morkoc

doi:10.1063/1.330013

Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy

A. Rockett, T. J. Drummond, J. E. Greene, H. Morkoc

Research output: Contribution to journal › Article › peer-review

Abstract

A SEGREGATION MODEL IS PRESENTED WHICH ACCOUNTS FOR THE ACCUMULATION OF SN AT THE GROWING FILM SURFACE AND THE CORRESPONDING SN DEPLETION NEAR THE FILM-SUBSTRATE INTERFACE DURING THE DEPOSITION OF SN-DOPED GAAS BY MOLECULAR BEAM EPITAXY. CALCULATED SN PROFILES WERE FOUND TO PROVIDE A GOOD FIT TO EXPERIMENTAL DATA, OBTAINED BY SECONDARY ION MASS SPECTROMETRY.

Original language	English (US)
Pages (from-to)	7085-7087
Number of pages	3
Journal	Journal of Applied Physics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1063/1.330013
State	Published - 1982
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.330013

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title = "Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy",

abstract = "A SEGREGATION MODEL IS PRESENTED WHICH ACCOUNTS FOR THE ACCUMULATION OF SN AT THE GROWING FILM SURFACE AND THE CORRESPONDING SN DEPLETION NEAR THE FILM-SUBSTRATE INTERFACE DURING THE DEPOSITION OF SN-DOPED GAAS BY MOLECULAR BEAM EPITAXY. CALCULATED SN PROFILES WERE FOUND TO PROVIDE A GOOD FIT TO EXPERIMENTAL DATA, OBTAINED BY SECONDARY ION MASS SPECTROMETRY.",

author = "A. Rockett and Drummond, {T. J.} and Greene, {J. E.} and H. Morkoc",

year = "1982",

doi = "10.1063/1.330013",

language = "English (US)",

volume = "53",

pages = "7085--7087",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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AU - Drummond, T. J.

AU - Greene, J. E.

AU - Morkoc, H.

PY - 1982

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AB - A SEGREGATION MODEL IS PRESENTED WHICH ACCOUNTS FOR THE ACCUMULATION OF SN AT THE GROWING FILM SURFACE AND THE CORRESPONDING SN DEPLETION NEAR THE FILM-SUBSTRATE INTERFACE DURING THE DEPOSITION OF SN-DOPED GAAS BY MOLECULAR BEAM EPITAXY. CALCULATED SN PROFILES WERE FOUND TO PROVIDE A GOOD FIT TO EXPERIMENTAL DATA, OBTAINED BY SECONDARY ION MASS SPECTROMETRY.

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Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy

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