Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy

A. Rockett, T. J. Drummond, J. E. Greene, H. Morkoc

Research output: Contribution to journalArticle

Abstract

A SEGREGATION MODEL IS PRESENTED WHICH ACCOUNTS FOR THE ACCUMULATION OF SN AT THE GROWING FILM SURFACE AND THE CORRESPONDING SN DEPLETION NEAR THE FILM-SUBSTRATE INTERFACE DURING THE DEPOSITION OF SN-DOPED GAAS BY MOLECULAR BEAM EPITAXY. CALCULATED SN PROFILES WERE FOUND TO PROVIDE A GOOD FIT TO EXPERIMENTAL DATA, OBTAINED BY SECONDARY ION MASS SPECTROMETRY.

Original languageEnglish (US)
Pages (from-to)7085-7087
Number of pages3
JournalJournal of Applied Physics
Volume53
Issue number10
DOIs
StatePublished - Dec 1 1982

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Rockett, A., Drummond, T. J., Greene, J. E., & Morkoc, H. (1982). Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 53(10), 7085-7087. https://doi.org/10.1063/1.330013