Surface roughness and pattern formation during homoepitaxial growth of Ge(001) at low temperatures

Joseph E. Van Nostrand; S. Jay Chey; David G Cahill

doi:10.1116/1.587818

Surface roughness and pattern formation during homoepitaxial growth of Ge(001) at low temperatures

Joseph E. Van Nostrand, S. Jay Chey, David G Cahill

Research output: Contribution to journal › Article › peer-review

Abstract

The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy. The range of film thickness studied spans more than three orders of magnitude, 0.1-200 nm. Beginning at a film thickness near 100 nm, a periodic pattern of growth mounds is observed. The average in-plane separation of growth features d evolves continuously with film thickness t, following a power law d = t^0.42. The vertical roughness of the film does not follow a single power-law behavior over this range of film thickness.

Original language	English (US)
Pages (from-to)	1816-1819
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	4
DOIs	https://doi.org/10.1116/1.587818
State	Published - Jul 1995

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.587818

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abstract = "The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy. The range of film thickness studied spans more than three orders of magnitude, 0.1-200 nm. Beginning at a film thickness near 100 nm, a periodic pattern of growth mounds is observed. The average in-plane separation of growth features d evolves continuously with film thickness t, following a power law d = t0.42. The vertical roughness of the film does not follow a single power-law behavior over this range of film thickness.",

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AB - The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy. The range of film thickness studied spans more than three orders of magnitude, 0.1-200 nm. Beginning at a film thickness near 100 nm, a periodic pattern of growth mounds is observed. The average in-plane separation of growth features d evolves continuously with film thickness t, following a power law d = t0.42. The vertical roughness of the film does not follow a single power-law behavior over this range of film thickness.

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Surface roughness and pattern formation during homoepitaxial growth of Ge(001) at low temperatures

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