The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy. The range of film thickness studied spans more than three orders of magnitude, 0.1-200 nm. Beginning at a film thickness near 100 nm, a periodic pattern of growth mounds is observed. The average in-plane separation of growth features d evolves continuously with film thickness t, following a power law d = t0.42. The vertical roughness of the film does not follow a single power-law behavior over this range of film thickness.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 1995|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering