Abstract
Type-II GaAsSb DHBTs have been designed, grown and fabricated. DC and RF performances of devices with varying emitter widths have been characterized and compared. It is found that the emitter size effect limit the current gain of scaled devices and emitter ledge can help mitigating the emitter size effect. Also, RF measurement and modeling show that the base resistance is the limiting factor for the high frequency performance of the scaled device.
| Original language | English (US) |
|---|---|
| Pages | 211-214 |
| Number of pages | 4 |
| State | Published - 2014 |
| Event | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States Duration: May 19 2014 → May 22 2014 |
Other
| Other | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 |
|---|---|
| Country/Territory | United States |
| City | Denver, CO |
| Period | 5/19/14 → 5/22/14 |
Keywords
- DHBT
- Emitter size effect
- GaAsSb
- Ledge
- Scaling
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'Surface recombination and performance issues of scaling submicron emitter on Type-II GaAsSb DHBTs'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS