Surface recombination and performance issues of scaling submicron emitter on Type-II GaAsSb DHBTs

Huiming Xu, Eric W. Iverson, Ardy Winoto, Milton Feng

Research output: Contribution to conferencePaper

Abstract

Type-II GaAsSb DHBTs have been designed, grown and fabricated. DC and RF performances of devices with varying emitter widths have been characterized and compared. It is found that the emitter size effect limit the current gain of scaled devices and emitter ledge can help mitigating the emitter size effect. Also, RF measurement and modeling show that the base resistance is the limiting factor for the high frequency performance of the scaled device.

Original languageEnglish (US)
Pages211-214
Number of pages4
StatePublished - Jan 1 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States
Duration: May 19 2014May 22 2014

Other

Other2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
CountryUnited States
CityDenver, CO
Period5/19/145/22/14

Keywords

  • DHBT
  • Emitter size effect
  • GaAsSb
  • Ledge
  • Scaling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Xu, H., Iverson, E. W., Winoto, A., & Feng, M. (2014). Surface recombination and performance issues of scaling submicron emitter on Type-II GaAsSb DHBTs. 211-214. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.