Surface polarities of sputtered epitaxial CuInSe2 and Cu1 In3 Se5 thin films grown on GaAs (001) substrates

L. C. Yang; G. S. Chen; A. Rockett

doi:10.1063/1.1929071

Surface polarities of sputtered epitaxial CuInSe2 and Cu1 In3 Se5 thin films grown on GaAs (001) substrates

L. C. Yang, G. S. Chen, A. Rockett

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Abstract

Epitaxial CuInSe2 and Cu1 In3 Se5 films have been synthesized on GaAs(001) by cosputtering CuIn and evaporating Se method. Scanning electron micrograph results show that surface morphologies of CuInSe2 and Cu1 In3 Se5 epitaxial films are substantially different. The rectangular pits of CuInSe2 films imply that the surface energy of (112)B[Se-terminated] is lower than (112)A[metal-terminated] in chalcopyrite CuInSe2 crystals. Nevertheless, the square pits of the Cu1 In3 Se5 films lead to the conclusion that (112)A and (112)B have almost the same surface energies in the defect-ordered chalcopyrite Cu1 In3 Se5 crystals. It implies that charge compensation between (112)A and (112)B facets is the driving force of the square pits formation in Cu1 In3 Se5 crystals.

Original language	English (US)
Article number	201907
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1929071
State	Published - May 16 2005
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.1929071

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title = "Surface polarities of sputtered epitaxial CuInSe2 and Cu1 In3 Se5 thin films grown on GaAs (001) substrates",

abstract = "Epitaxial CuInSe2 and Cu1 In3 Se5 films have been synthesized on GaAs(001) by cosputtering CuIn and evaporating Se method. Scanning electron micrograph results show that surface morphologies of CuInSe2 and Cu1 In3 Se5 epitaxial films are substantially different. The rectangular pits of CuInSe2 films imply that the surface energy of (112)B[Se-terminated] is lower than (112)A[metal-terminated] in chalcopyrite CuInSe2 crystals. Nevertheless, the square pits of the Cu1 In3 Se5 films lead to the conclusion that (112)A and (112)B have almost the same surface energies in the defect-ordered chalcopyrite Cu1 In3 Se5 crystals. It implies that charge compensation between (112)A and (112)B facets is the driving force of the square pits formation in Cu1 In3 Se5 crystals.",

author = "Yang, {L. C.} and Chen, {G. S.} and A. Rockett",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China (NSC 88-2216-E-150-016) and the National Renewable Energy Laboratory (AAT-1-30620 and ACQ-1-30619-07) for financial support.",

year = "2005",

month = may,

day = "16",

doi = "10.1063/1.1929071",

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volume = "86",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Surface polarities of sputtered epitaxial CuInSe2 and Cu1 In3 Se5 thin films grown on GaAs (001) substrates

AU - Yang, L. C.

AU - Chen, G. S.

AU - Rockett, A.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China (NSC 88-2216-E-150-016) and the National Renewable Energy Laboratory (AAT-1-30620 and ACQ-1-30619-07) for financial support.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - Epitaxial CuInSe2 and Cu1 In3 Se5 films have been synthesized on GaAs(001) by cosputtering CuIn and evaporating Se method. Scanning electron micrograph results show that surface morphologies of CuInSe2 and Cu1 In3 Se5 epitaxial films are substantially different. The rectangular pits of CuInSe2 films imply that the surface energy of (112)B[Se-terminated] is lower than (112)A[metal-terminated] in chalcopyrite CuInSe2 crystals. Nevertheless, the square pits of the Cu1 In3 Se5 films lead to the conclusion that (112)A and (112)B have almost the same surface energies in the defect-ordered chalcopyrite Cu1 In3 Se5 crystals. It implies that charge compensation between (112)A and (112)B facets is the driving force of the square pits formation in Cu1 In3 Se5 crystals.

AB - Epitaxial CuInSe2 and Cu1 In3 Se5 films have been synthesized on GaAs(001) by cosputtering CuIn and evaporating Se method. Scanning electron micrograph results show that surface morphologies of CuInSe2 and Cu1 In3 Se5 epitaxial films are substantially different. The rectangular pits of CuInSe2 films imply that the surface energy of (112)B[Se-terminated] is lower than (112)A[metal-terminated] in chalcopyrite CuInSe2 crystals. Nevertheless, the square pits of the Cu1 In3 Se5 films lead to the conclusion that (112)A and (112)B have almost the same surface energies in the defect-ordered chalcopyrite Cu1 In3 Se5 crystals. It implies that charge compensation between (112)A and (112)B facets is the driving force of the square pits formation in Cu1 In3 Se5 crystals.

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Surface polarities of sputtered epitaxial CuInSe2 and Cu1 In3 Se5 thin films grown on GaAs (001) substrates

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