Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

Y. D. Kim, F. Nakamura, E. Yoon, D. V. Forbes, X. Li, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

Abstract

By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H2 purging time between the supply of trimethylgallium and AsH3, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown at this temperature by monitoring the SPA signal.

Original languageEnglish (US)
Pages (from-to)1164-1168
Number of pages5
JournalJournal of Electronic Materials
Volume26
Issue number10
DOIs
StatePublished - Oct 1997

Keywords

  • GaAs
  • InGaAs
  • Metalorganic chemical vapor deposition (MOCVD)
  • Photoluminescence (PL)
  • Surface photoabsorption

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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