Abstract
By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H2 purging time between the supply of trimethylgallium and AsH3, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown at this temperature by monitoring the SPA signal.
Original language | English (US) |
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Pages (from-to) | 1164-1168 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1997 |
Keywords
- GaAs
- InGaAs
- Metalorganic chemical vapor deposition (MOCVD)
- Photoluminescence (PL)
- Surface photoabsorption
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- General Materials Science
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)