Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Joseph E. Van Nostrand; S. Jay Chey; David G. Cahill; A. E. Botchkarev; H. Morkoç

doi:10.1016/0039-6028(95)00939-6

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Joseph E. Van Nostrand, S. Jay Chey, David G. Cahill, A. E. Botchkarev, H. Morkoç

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (As₄) and gas-source (AsH₃) arsenic at temperatures ranging from 500 to 650̊C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid-and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.

Original language	English (US)
Pages (from-to)	136-144
Number of pages	9
Journal	Surface Science
Volume	346
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(95)00939-6
State	Published - Feb 1 1996

Keywords

Gallium arsenide
Growth
Low index single crystal surfaces
Molecular beam epitaxy
Scanning tunneling microscopy
Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Online availability

10.1016/0039-6028(95)00939-6

Library availability

Discover UIUC Full Text

Cite this

@article{c0b765ab301f4f708a451eab285c6ee5,

title = "Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy",

abstract = "Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (As4) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650̊C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid-and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.",

keywords = "Gallium arsenide, Growth, Low index single crystal surfaces, Molecular beam epitaxy, Scanning tunneling microscopy, Surface structure, morphology, roughness, and topography",

author = "{Van Nostrand}, {Joseph E.} and Chey, {S. Jay} and Cahill, {David G.} and Botchkarev, {A. E.} and H. Morko{\c c}",

year = "1996",

month = feb,

day = "1",

doi = "10.1016/0039-6028(95)00939-6",

language = "English (US)",

volume = "346",

pages = "136--144",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

AU - Van Nostrand, Joseph E.

AU - Chey, S. Jay

AU - Cahill, David G.

AU - Botchkarev, A. E.

AU - Morkoç, H.

PY - 1996/2/1

Y1 - 1996/2/1

N2 - Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (As4) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650̊C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid-and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.

AB - Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (As4) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650̊C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid-and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.

KW - Gallium arsenide

KW - Growth

KW - Low index single crystal surfaces

KW - Molecular beam epitaxy

KW - Scanning tunneling microscopy

KW - Surface structure, morphology, roughness, and topography

UR - http://www.scopus.com/inward/record.url?scp=0030083322&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030083322&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(95)00939-6

DO - 10.1016/0039-6028(95)00939-6

M3 - Article

AN - SCOPUS:0030083322

SN - 0039-6028

VL - 346

SP - 136

EP - 144

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this