Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Joseph E. Van Nostrand, S. Jay Chey, David G. Cahill, A. E. Botchkarev, H. Morkoç

Research output: Contribution to journalArticle

Abstract

Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]. Films are grown using solid-source (As4) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650̊C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid-and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.

Original languageEnglish (US)
Pages (from-to)136-144
Number of pages9
JournalSurface Science
Volume346
Issue number1-3
DOIs
StatePublished - Feb 1 1996

Keywords

  • Gallium arsenide
  • Growth
  • Low index single crystal surfaces
  • Molecular beam epitaxy
  • Scanning tunneling microscopy
  • Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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