Surface morphology during multilayer epitaxial growth of Ge(001)

Joseph E. Van Nostrand, S. Jay Chey, M. A. Hasan, David G. Cahill, J. E. Greene

Research output: Contribution to journalArticlepeer-review

Abstract

The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60-230°C and film thicknesses of 5 nm to 1 νm. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60°C to nearly 200 nm at 230°C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.

Original languageEnglish (US)
Pages (from-to)1127-1130
Number of pages4
JournalPhysical review letters
Volume74
Issue number7
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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