The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60-230°C and film thicknesses of 5 nm to 1 νm. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60°C to nearly 200 nm at 230°C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.
ASJC Scopus subject areas
- Physics and Astronomy(all)