Surface emission vertical cavity transistor laser

Mong Kai Wu; Milton Feng; Nick Holonyak

doi:10.1109/LPT.2012.2203356

Surface emission vertical cavity transistor laser

Mong Kai Wu
, Milton Feng
, Nick Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI _c ΔI _B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I _B > I _TH). The surface emission VCTL threshold current is I _TH ∼ 3 mA for a cavity of 9 × 6 μrm ² lateral dimensions. The laser spectra at I _B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 Å.

Original language	English (US)
Article number	6214571
Pages (from-to)	1346-1348
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2012.2203356
State	Published - 2012

Keywords

Transistor laser
vertical cavity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2012.2203356

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@article{eaaa7929f76044ddb780991546abd186,

title = "Surface emission vertical cavity transistor laser",

abstract = "We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI c ΔI B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9 × 6 μrm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 {\AA}.",

keywords = "Transistor laser, vertical cavity",

author = "Wu, \{Mong Kai\} and Milton Feng and Nick Holonyak",

note = "Manuscript received April 17, 2012; revised May 6, 2012; accepted June 2, 2012. Date of publication June 8, 2012; date of current version July 10, 2012. This work was supported in part by the Army Research Office under Grant W911NF-08-1-0469. The work of N. Holonyak was supported by the Sony Corporation under the John Bardeen Endowed Chairmanship of Electrical and Computer Engineering and Physics.",

year = "2012",

doi = "10.1109/LPT.2012.2203356",

language = "English (US)",

volume = "24",

pages = "1346--1348",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "15",

}

TY - JOUR

T1 - Surface emission vertical cavity transistor laser

AU - Wu, Mong Kai

AU - Feng, Milton

AU - Holonyak, Nick

N1 - Manuscript received April 17, 2012; revised May 6, 2012; accepted June 2, 2012. Date of publication June 8, 2012; date of current version July 10, 2012. This work was supported in part by the Army Research Office under Grant W911NF-08-1-0469. The work of N. Holonyak was supported by the Sony Corporation under the John Bardeen Endowed Chairmanship of Electrical and Computer Engineering and Physics.

PY - 2012

Y1 - 2012

N2 - We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI c ΔI B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9 × 6 μrm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 Å.

AB - We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI c ΔI B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9 × 6 μrm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 Å.

KW - Transistor laser

KW - vertical cavity

UR - https://www.scopus.com/pages/publications/84863941953

UR - https://www.scopus.com/pages/publications/84863941953#tab=citedBy

U2 - 10.1109/LPT.2012.2203356

DO - 10.1109/LPT.2012.2203356

M3 - Article

AN - SCOPUS:84863941953

SN - 1041-1135

VL - 24

SP - 1346

EP - 1348

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

M1 - 6214571

ER -

Surface emission vertical cavity transistor laser

Abstract

Keywords

ASJC Scopus subject areas

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