We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI c ΔI B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9 × 6 μrm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 Å.
- Transistor laser
- vertical cavity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering