Surface emission vertical cavity transistor laser

Mong Kai Wu, Milton Feng, Nick Holonyak

Research output: Contribution to journalArticlepeer-review


We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI c ΔI B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9 × 6 μrm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ∼ 0.7 Å.

Original languageEnglish (US)
Article number6214571
Pages (from-to)1346-1348
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number15
StatePublished - 2012


  • Transistor laser
  • vertical cavity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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