Surface diffusion of in on Si(111): Evidence for surface ionization effects

C. E. Allen, R. Ditchfield, Edmund G Seebauer

Research output: Contribution to journalArticle

Abstract

Second harmonic microscopy has been used to quantify the surface diffusion of In on Si(111). At temperatures near 50% of the bulk melting temperature and in the coverage range 0<θ<0.7, the activation energy Ediff and pre-exponential factor D0 lie at 42±0.5 kcal/mol and 3 × 103±03 cm2/s, respectively. These parameters, which are quite large, are explained semiquantitatively by reference to an adatom-vacancy model recently developed for related systems. The present work, when compared with the results of these other systems, offers significant evidence for the effects of adatom-vacancy ionization.

Original languageEnglish (US)
Pages (from-to)22-29
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number1
DOIs
StatePublished - Jan 1 1996

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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