Surface diffusion kinetics on amorphous silicon

A. S. Dalton; D. Llera-Hurlburt; E. G. Seebauer

doi:10.1016/S0039-6028(01)01493-5

Surface diffusion kinetics on amorphous silicon

A. S. Dalton, D. Llera-Hurlburt, E. G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111).

Original language	English (US)
Pages (from-to)	L761-L766
Journal	Surface Science
Volume	494
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(01)01493-5
State	Published - Nov 10 2001

Keywords

Amorphous surfaces
Computer simulations
Diffusion and migration
Models of surface kinetics
Silicon
Surface diffusion

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Online availability

10.1016/S0039-6028(01)01493-5

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title = "Surface diffusion kinetics on amorphous silicon",

abstract = "We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111).",

keywords = "Amorphous surfaces, Computer simulations, Diffusion and migration, Models of surface kinetics, Silicon, Surface diffusion",

author = "Dalton, {A. S.} and D. Llera-Hurlburt and Seebauer, {E. G.}",

note = "Funding Information: This work was partially supported by NSF (CTS 98-06329). D.L.-H. acknowledges support of DOE (DEFG02-91ER45439) through the F. Seitz Materials Research Laboratory at UIUC. ",

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T1 - Surface diffusion kinetics on amorphous silicon

AU - Dalton, A. S.

AU - Llera-Hurlburt, D.

AU - Seebauer, E. G.

N1 - Funding Information: This work was partially supported by NSF (CTS 98-06329). D.L.-H. acknowledges support of DOE (DEFG02-91ER45439) through the F. Seitz Materials Research Laboratory at UIUC.

PY - 2001/11/10

Y1 - 2001/11/10

N2 - We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111).

AB - We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111).

KW - Amorphous surfaces

KW - Computer simulations

KW - Diffusion and migration

KW - Models of surface kinetics

KW - Silicon

KW - Surface diffusion

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Surface diffusion kinetics on amorphous silicon

Abstract

Keywords

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