Surface diffusion kinetics on amorphous silicon

A. S. Dalton, D. Llera-Hurlburt, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111).

Original languageEnglish (US)
Pages (from-to)L761-L766
JournalSurface Science
Issue number1
StatePublished - Nov 10 2001


  • Amorphous surfaces
  • Computer simulations
  • Diffusion and migration
  • Models of surface kinetics
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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