Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)

Research output: Contribution to journalArticle

Abstract

Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C.

Original languageEnglish (US)
Pages (from-to)175-180
Number of pages6
JournalSurface Science
Volume574
Issue number2-3
DOIs
StatePublished - Jan 10 2005

Keywords

  • Adatom
  • Surface crater
  • Thermal spike
  • Vacancy
  • Viscous flow

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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