Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)

J. C. Kim; David G. Cahill; R. S. Averback

doi:10.1016/j.susc.2004.10.026

Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)

J. C. Kim, David G. Cahill, R. S. Averback

Research output: Contribution to journal › Article › peer-review

Abstract

Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C.

Original language	English (US)
Pages (from-to)	175-180
Number of pages	6
Journal	Surface Science
Volume	574
Issue number	2-3
DOIs	https://doi.org/10.1016/j.susc.2004.10.026
State	Published - Jan 10 2005

Keywords

Adatom
Surface crater
Thermal spike
Vacancy
Viscous flow

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Online availability

10.1016/j.susc.2004.10.026

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title = "Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)",

abstract = "Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C.",

keywords = "Adatom, Surface crater, Thermal spike, Vacancy, Viscous flow",

author = "Kim, {J. C.} and Cahill, {David G.} and Averback, {R. S.}",

note = "Funding Information: This work was supported by the U.S. National Science Foundation Grant No. DMR-9986160 through the University of Illinois Department of Materials Science and Engineering and by the U.S. Department of Energy Grant No. DEFG02-96-ER45439 through the University of Illinois Materials Research Laboratory.",

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doi = "10.1016/j.susc.2004.10.026",

language = "English (US)",

volume = "574",

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journal = "Surface Science",

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T1 - Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)

AU - Kim, J. C.

AU - Cahill, David G.

AU - Averback, R. S.

N1 - Funding Information: This work was supported by the U.S. National Science Foundation Grant No. DMR-9986160 through the University of Illinois Department of Materials Science and Engineering and by the U.S. Department of Energy Grant No. DEFG02-96-ER45439 through the University of Illinois Materials Research Laboratory.

PY - 2005/1/10

Y1 - 2005/1/10

N2 - Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C.

AB - Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C.

KW - Adatom

KW - Surface crater

KW - Thermal spike

KW - Vacancy

KW - Viscous flow

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IS - 2-3

ER -

Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1)

Abstract

Keywords

ASJC Scopus subject areas

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