Surface damage produced by 20 keV Ga bombardment of Ge(001)

P. Bellon; S. Jay Chey; Joseph E. Van Nostrand; Mai Ghaly; David G. Cahill; R. S. Averback

doi:10.1016/0039-6028(95)00656-7

Surface damage produced by 20 keV Ga bombardment of Ge(001)

P. Bellon
, S. Jay Chey
, Joseph E. Van Nostrand
, Mai Ghaly
, David G. Cahill
, R. S. Averback

Research output: Contribution to journal › Article › peer-review

Abstract

Surface damage on Ge(100) due to single 20 keV Ga⁺ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm², while the second consists of large craters on the scale of 85 nm². The small damage features are produced by a large fraction of the ions, but only ∼ 10^-3 ions produce craters.

Original language	English (US)
Pages (from-to)	135-141
Number of pages	7
Journal	Surface Science
Volume	339
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00656-7
State	Published - Sep 20 1995

Keywords

Computer simulations
Germanium
Ion implantation
Low index single crystal surfaces
Molecular dynamics
Sputtering
Surface defects
Surface roughening

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces
Physical and Theoretical Chemistry

Online availability

10.1016/0039-6028(95)00656-7

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@article{6d201a14af2143049ecf84567a9de2ba,

title = "Surface damage produced by 20 keV Ga bombardment of Ge(001)",

abstract = "Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm2, while the second consists of large craters on the scale of 85 nm2. The small damage features are produced by a large fraction of the ions, but only ∼ 10-3 ions produce craters.",

keywords = "Computer simulations, Germanium, Ion implantation, Low index single crystal surfaces, Molecular dynamics, Sputtering, Surface defects, Surface roughening",

author = "P. Bellon and Chey, \{S. Jay\} and \{Van Nostrand\}, \{Joseph E.\} and Mai Ghaly and Cahill, \{David G.\} and Averback, \{R. S.\}",

note = "The authors are grateful to Dr. A. Wagner at IBM, Yorktown Heights, for providing technical information about the operation and characteristics of the FEI metal ion source. This work was supported by the US Department of Energy grant DEFG02-91-ER45439 through the University of Illinois Materials Research Laboratory and the Donors of the Petroleum Research Fund. We are also grateful for a grant of computer time from the National Center for Supercomputer Applications at the University of Illinois, Urbana, IL.",

year = "1995",

month = sep,

day = "20",

doi = "10.1016/0039-6028(95)00656-7",

language = "English (US)",

volume = "339",

pages = "135--141",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Surface damage produced by 20 keV Ga bombardment of Ge(001)

AU - Bellon, P.

AU - Chey, S. Jay

AU - Van Nostrand, Joseph E.

AU - Ghaly, Mai

AU - Cahill, David G.

AU - Averback, R. S.

N1 - The authors are grateful to Dr. A. Wagner at IBM, Yorktown Heights, for providing technical information about the operation and characteristics of the FEI metal ion source. This work was supported by the US Department of Energy grant DEFG02-91-ER45439 through the University of Illinois Materials Research Laboratory and the Donors of the Petroleum Research Fund. We are also grateful for a grant of computer time from the National Center for Supercomputer Applications at the University of Illinois, Urbana, IL.

PY - 1995/9/20

Y1 - 1995/9/20

N2 - Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm2, while the second consists of large craters on the scale of 85 nm2. The small damage features are produced by a large fraction of the ions, but only ∼ 10-3 ions produce craters.

AB - Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm2, while the second consists of large craters on the scale of 85 nm2. The small damage features are produced by a large fraction of the ions, but only ∼ 10-3 ions produce craters.

KW - Computer simulations

KW - Germanium

KW - Ion implantation

KW - Low index single crystal surfaces

KW - Molecular dynamics

KW - Sputtering

KW - Surface defects

KW - Surface roughening

UR - https://www.scopus.com/pages/publications/0029373622

UR - https://www.scopus.com/pages/publications/0029373622#tab=citedBy

U2 - 10.1016/0039-6028(95)00656-7

DO - 10.1016/0039-6028(95)00656-7

M3 - Article

AN - SCOPUS:0029373622

SN - 0039-6028

VL - 339

SP - 135

EP - 141

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Surface damage produced by 20 keV Ga bombardment of Ge(001)

Abstract

Keywords

ASJC Scopus subject areas

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