Surface damage produced by 20 keV Ga bombardment of Ge(001)

P. Bellon, S. Jay Chey, Joseph E. Van Nostrand, Mai Ghaly, David G. Cahill, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm2, while the second consists of large craters on the scale of 85 nm2. The small damage features are produced by a large fraction of the ions, but only ∼ 10-3 ions produce craters.

Original languageEnglish (US)
Pages (from-to)135-141
Number of pages7
JournalSurface Science
Volume339
Issue number1-2
DOIs
StatePublished - Sep 20 1995

Keywords

  • Computer simulations
  • Germanium
  • Ion implantation
  • Low index single crystal surfaces
  • Molecular dynamics
  • Sputtering
  • Surface defects
  • Surface roughening

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Physical and Theoretical Chemistry

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