Abstract
Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 × 1 nm2, while the second consists of large craters on the scale of 85 nm2. The small damage features are produced by a large fraction of the ions, but only ∼ 10-3 ions produce craters.
Original language | English (US) |
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Pages (from-to) | 135-141 |
Number of pages | 7 |
Journal | Surface Science |
Volume | 339 |
Issue number | 1-2 |
DOIs | |
State | Published - Sep 20 1995 |
Keywords
- Computer simulations
- Germanium
- Ion implantation
- Low index single crystal surfaces
- Molecular dynamics
- Sputtering
- Surface defects
- Surface roughening
ASJC Scopus subject areas
- Materials Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
- Physical and Theoretical Chemistry