Surface control of interstitial behavior for improved ultrashallow junction formation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-SiO2 interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent fits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages81-86
Number of pages6
Volume4
ISBN (Print)7309039157
StatePublished - Aug 16 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: Mar 15 2004Mar 16 2004

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/TerritoryChina
CityShanghai
Period3/15/043/16/04

ASJC Scopus subject areas

  • Engineering(all)

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