Surface-based manipulation of point defects in rutile TiO2

Alice G. Hollister; Prashun Gorai; Edmund G. Seebauer

doi:10.1063/1.4810073

Surface-based manipulation of point defects in rutile TiO₂

Alice G. Hollister, Prashun Gorai, Edmund G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Through isotopic self-diffusion measurements, the present work resolves a discrepancy in the literature about the primary oxygen-related point defect in rutile TiO₂ by showing that suitably prepared surfaces can controllably inject large numbers of an exceptionally mobile defect. Results strongly suggest that this defect is the oxygen interstitial, whose existence in TiO₂ has been predicted computationally but never experimentally confirmed. The surface pathway offers an approach for replacing donor oxygen vacancies with acceptor oxygen interstitials facilitating manipulation of near-surface electronic bands.

Original language	English (US)
Article number	231601
Journal	Applied Physics Letters
Volume	102
Issue number	23
DOIs	https://doi.org/10.1063/1.4810073
State	Published - Jun 10 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.4810073

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Cite this

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title = "Surface-based manipulation of point defects in rutile TiO2",

abstract = "Through isotopic self-diffusion measurements, the present work resolves a discrepancy in the literature about the primary oxygen-related point defect in rutile TiO2 by showing that suitably prepared surfaces can controllably inject large numbers of an exceptionally mobile defect. Results strongly suggest that this defect is the oxygen interstitial, whose existence in TiO2 has been predicted computationally but never experimentally confirmed. The surface pathway offers an approach for replacing donor oxygen vacancies with acceptor oxygen interstitials facilitating manipulation of near-surface electronic bands.",

author = "Hollister, {Alice G.} and Prashun Gorai and Seebauer, {Edmund G.}",

note = "This work was partially supported by the National Science Foundation (DMR 07-04354 and DMR 10-05720). SIMS measurements were performed at the Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-96-ER45439. P.G. gratefully acknowledges fellowship support from the Dow Chemical Company.",

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