Abstract
Semiconductor surfaces offer efficient pathways for injecting native point defects into the underlying bulk. Adsorption of a suitably chosen foreign element serves to modulate the injection rate, even at small percentages of a monolayer. Through self-diffusion experiments using isotopic exchange with labeled oxygen, the present work demonstrates such behavior in the case of sulfur adsorption on c-axis Zn-terminated ZnO(0001), wherein the clean surface injects with exceptional efficiency. The experiments provide strong evidence that the injection sites comprise only a small fraction of the total surface atom density and that sulfur adsorption merely blocks those sites. Comparison with related systems shows this simple mechanism is surprisingly uncommon.
Original language | English (US) |
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Pages (from-to) | 23675-23682 |
Number of pages | 8 |
Journal | Journal of Physical Chemistry C |
Volume | 120 |
Issue number | 41 |
DOIs | |
State | Published - Oct 20 2016 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Energy
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films