@article{bda71919c595497098a443c627aab011,
title = "Surface Acoustic Wave Devices Using Lithium Niobate on Silicon Carbide",
abstract = "This work demonstrates a group of shear horizontal (SH0) mode resonators and filters using lithium niobate (LiNbO3) thin films on silicon carbide (SiC). The single-crystalline X-cut LiNbO3 thin films on 4H-SiC substrates have been prepared by ion-slicing and wafer-bonding processes. The fabricated resonator has demonstrated a large effective electromechanical coupling ( k}^{2 ) of 26.9% and a high-quality factor (Bode-Q ) of 1228, hence resulting in a high figure of merit (FoM = k2 Bode-Q ) of 330 at 2.28 GHz. Additionally, these fabricated resonators show scalable resonances from 1.61 to 3.05 GHz and impedance ratios between 53.2 and 74.7 dB. Filters based on demonstrated resonators have been demonstrated at 2.16 and 2.29 GHz with sharp roll-off and spurious-free responses over a wide frequency range. The filter with a center frequency of 2.29 GHz shows a 3-dB fractional bandwidth of 9.9%, an insertion loss of 1.38 dB, an out-of-band rejection of 41.6 dB, and a footprint of 0.75 mm2. Besides, the fabricated filters also show a temperature coefficient of frequency of-48.2 ppm/°C and power handling of 25 dBm. Although the power handling is limited by arc discharge and migration-induced damage of the interdigital electrodes and some ripples in insertion loss and group delay responses are still present due to the transverse spurious modes, the demonstrations still show that acoustic devices on the LiNbO3-on-SiC platform have great potential for radio-frequency applications.",
keywords = "Figure of merit (FoM), MEMS, impedance ratio, lithium niobate, piezoelectric filters, piezoelectric resonators, power handling, shear horizontal (SH0) modes, silicon carbide, temperature of frequency (TCF)",
author = "Shibin Zhang and Ruochen Lu and Hongyan Zhou and Steffen Link and Yansong Yang and Zhongxu Li and Kai Huang and Xin Ou and Songbin Gong",
note = "Funding Information: Manuscript received January 31, 2020; revised May 4, 2020; accepted May 18, 2020. Date of publication July 13, 2020; date of current version September 2, 2020. This work was supported in part by the College of Engineering, University of Illinois at Urbana Champaign, in part by the National Natural Science Foundation of China under Grant 61851406, in part by the Frontier Science Key Program of CAS under Grant QYZDY-SSW-JSC032, in part by the Chinese−Austrian Cooperative Research and Development Project under Grant GJHZ201950, in part by the K.C.Wong Education Foundation under Grant GJTD-2019-11, and in part by the China Scholarship Council (CSC) under Grant 201804910765. (Corresponding author: Shibin Zhang.) Shibin Zhang was with the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China, and also with the Department of Electrical and Computing Engineering, University of Illinois at Urbana–Champaign, Urbana, IL 61801 USA. He is now with the Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China (e-mail: sbzhang@mail.sim.ac.cn). Funding Information: This work was supported in part by the College of Engineering, University of Illinois at Urbana Champaign, in part by the National Natural Science Foundation of China under Grant 61851406, in part by the Frontier Science Key Program of CAS under Grant QYZDY-SSWJSC032, in part by the Chinese-Austrian Cooperative Research and Development Project under Grant GJHZ201950, in part by the K.C.Wong Education Foundation under Grant GJTD-2019-11, and in part by the China Scholarship Council (CSC) under Grant 201804910765. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = sep,
doi = "10.1109/TMTT.2020.3006294",
language = "English (US)",
volume = "68",
pages = "3653--3666",
journal = "IRE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}