Keyphrases
Silicon Substrate
100%
Device-independent
100%
Amorphous Silicon Thin Film
100%
Surface Acoustic Wave Devices
100%
Lithium Niobate
100%
Temperature Coefficient of Frequency
100%
LiNbO3 Thin Film
66%
Resonator
33%
Acoustics
33%
Silicon-based
33%
Wafer
33%
High-order
33%
Amorphous Silicon
33%
Acoustic Waves
33%
Fractional Bandwidth
33%
Expansion Coefficient
33%
Insertion Loss
33%
Electromechanical Coupling
33%
Reduction Temperature
33%
High Mass Loading
33%
Surface Material
33%
Acoustic Energy
33%
Structure Feature
33%
Conductive Layer
33%
Gigahertz
33%
Bonding Process
33%
Acoustic Impedance Mismatch
33%
Strong Potential
33%
Thermal Frequency
33%
Silicon Platform
33%
Operating Frequency
33%
Surface Substrate
33%
Shear Horizontal Wave
33%
Energy Confinement
33%
Spurious Modes
33%
Power Handling
33%
Frequency Stability
33%
Electromechanical Coupling Coefficient
33%
Temperature Expansion
33%
Out-of-band Rejection
33%
Conduction Effect
33%
Guided Acoustic Waves
33%
Parasitic Surface Conduction
33%
Engineering
Thin Films
100%
Silicon Substrate
100%
Surface Acoustic Wave Device
100%
Temperature Coefficient
100%
Resonator
33%
Conductive
33%
Thin Layer
33%
Fractional Bandwidth
33%
Expansion Coefficient
33%
Shear Wave
33%
Acoustic Impedance
33%
Acoustic Energy
33%
Reduced Temperature
33%
Insertion Loss
33%
Bonding Process
33%
Coupling Coefficient
33%
Stiffer Substrate
33%
Operating Frequency
33%
Surface Material
33%
Front End
33%