Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)

Richard Liu, Callan McCormick, Can Bayram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical properties of InGaN/GaN multi-quantum-well (MQWs) grown on sapphire and on Si(111) are reported. The tensile strain in the MQW on Si is shown to be beneficial for indium incorporation and Quantum-confined Stark Effect reduction in the multi-quantum wells. Raman spectroscopy reveals compressive strains of -0.107% in MQW on sapphire and tensile strain of +0.088% in MQW on Si. Temperature-dependent photoluminescence shows in MQW on sapphire a strong (30 meV peak-to-peak) S-shaped wavelength shift with decreasing temperature (6 K to 300K), whereas MQW on Si luminescence wavelength is stable and red-shifts monotonically. Micro-photoluminescence mapping over 200 by 200 μm2 shows the emission wavelength spatial uniformity of MQW on Si is 2.6 times higher than MQW on sapphire, possibly due to a more uniform indium incorporation in the multi-quantum-wells as a result of the tensile strain in MQW on Si. A positive correlation between emission energy and intensity is observed in MQW on sapphire but not in those on Si. Despite the lower crystal quality of MQW on Si revealed by atomic force microscopy, it exhibits a higher internal quantum efficiency (IQE) than MQW on sapphire from 6 K to 250 K, and equalizes at 300 K. Overall, MQW on Si exhibits a high IQE, higher wavelength spatial uniformity and temperature stability, while providing a much more scalable platform than MQW on sapphire for next generation integrated photonics.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XIV
EditorsUlrich T. Schwarz, Hadis Morkoc, Hiroshi Fujioka
PublisherSPIE
ISBN (Electronic)9781510624788
DOIs
StatePublished - Jan 1 2019
EventGallium Nitride Materials and Devices XIV 2019 - San Francisco, United States
Duration: Feb 4 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10918
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XIV 2019
CountryUnited States
CitySan Francisco
Period2/4/192/7/19

Fingerprint

Stark effect
InGaN
Indium
Quantum Well
Silicon
Semiconductor quantum wells
Light emitting diodes
indium
light emitting diodes
retarding
quantum wells
Clustering
silicon
Aluminum Oxide
Sapphire
sapphire
Tensile strain
Wavelength
Quantum Efficiency
Photoluminescence

Keywords

  • AlGaN buffer layer
  • IQE
  • Indium incorporation
  • MOCVD
  • MQW
  • Quantum confined stark effect
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Liu, R., McCormick, C., & Bayram, C. (2019). Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111). In U. T. Schwarz, H. Morkoc, & H. Fujioka (Eds.), Gallium Nitride Materials and Devices XIV [1091822] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10918). SPIE. https://doi.org/10.1117/12.2506426

Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111). / Liu, Richard; McCormick, Callan; Bayram, Can.

Gallium Nitride Materials and Devices XIV. ed. / Ulrich T. Schwarz; Hadis Morkoc; Hiroshi Fujioka. SPIE, 2019. 1091822 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10918).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, R, McCormick, C & Bayram, C 2019, Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111). in UT Schwarz, H Morkoc & H Fujioka (eds), Gallium Nitride Materials and Devices XIV., 1091822, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10918, SPIE, Gallium Nitride Materials and Devices XIV 2019, San Francisco, United States, 2/4/19. https://doi.org/10.1117/12.2506426
Liu R, McCormick C, Bayram C. Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111). In Schwarz UT, Morkoc H, Fujioka H, editors, Gallium Nitride Materials and Devices XIV. SPIE. 2019. 1091822. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2506426
Liu, Richard ; McCormick, Callan ; Bayram, Can. / Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111). Gallium Nitride Materials and Devices XIV. editor / Ulrich T. Schwarz ; Hadis Morkoc ; Hiroshi Fujioka. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{baf02ee93c2e4963bc6b21eefe072f90,
title = "Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)",
abstract = "Optical properties of InGaN/GaN multi-quantum-well (MQWs) grown on sapphire and on Si(111) are reported. The tensile strain in the MQW on Si is shown to be beneficial for indium incorporation and Quantum-confined Stark Effect reduction in the multi-quantum wells. Raman spectroscopy reveals compressive strains of -0.107{\%} in MQW on sapphire and tensile strain of +0.088{\%} in MQW on Si. Temperature-dependent photoluminescence shows in MQW on sapphire a strong (30 meV peak-to-peak) S-shaped wavelength shift with decreasing temperature (6 K to 300K), whereas MQW on Si luminescence wavelength is stable and red-shifts monotonically. Micro-photoluminescence mapping over 200 by 200 μm2 shows the emission wavelength spatial uniformity of MQW on Si is 2.6 times higher than MQW on sapphire, possibly due to a more uniform indium incorporation in the multi-quantum-wells as a result of the tensile strain in MQW on Si. A positive correlation between emission energy and intensity is observed in MQW on sapphire but not in those on Si. Despite the lower crystal quality of MQW on Si revealed by atomic force microscopy, it exhibits a higher internal quantum efficiency (IQE) than MQW on sapphire from 6 K to 250 K, and equalizes at 300 K. Overall, MQW on Si exhibits a high IQE, higher wavelength spatial uniformity and temperature stability, while providing a much more scalable platform than MQW on sapphire for next generation integrated photonics.",
keywords = "AlGaN buffer layer, IQE, Indium incorporation, MOCVD, MQW, Quantum confined stark effect, Silicon",
author = "Richard Liu and Callan McCormick and Can Bayram",
year = "2019",
month = "1",
day = "1",
doi = "10.1117/12.2506426",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Schwarz, {Ulrich T.} and Hadis Morkoc and Hiroshi Fujioka",
booktitle = "Gallium Nitride Materials and Devices XIV",

}

TY - GEN

T1 - Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)

AU - Liu, Richard

AU - McCormick, Callan

AU - Bayram, Can

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Optical properties of InGaN/GaN multi-quantum-well (MQWs) grown on sapphire and on Si(111) are reported. The tensile strain in the MQW on Si is shown to be beneficial for indium incorporation and Quantum-confined Stark Effect reduction in the multi-quantum wells. Raman spectroscopy reveals compressive strains of -0.107% in MQW on sapphire and tensile strain of +0.088% in MQW on Si. Temperature-dependent photoluminescence shows in MQW on sapphire a strong (30 meV peak-to-peak) S-shaped wavelength shift with decreasing temperature (6 K to 300K), whereas MQW on Si luminescence wavelength is stable and red-shifts monotonically. Micro-photoluminescence mapping over 200 by 200 μm2 shows the emission wavelength spatial uniformity of MQW on Si is 2.6 times higher than MQW on sapphire, possibly due to a more uniform indium incorporation in the multi-quantum-wells as a result of the tensile strain in MQW on Si. A positive correlation between emission energy and intensity is observed in MQW on sapphire but not in those on Si. Despite the lower crystal quality of MQW on Si revealed by atomic force microscopy, it exhibits a higher internal quantum efficiency (IQE) than MQW on sapphire from 6 K to 250 K, and equalizes at 300 K. Overall, MQW on Si exhibits a high IQE, higher wavelength spatial uniformity and temperature stability, while providing a much more scalable platform than MQW on sapphire for next generation integrated photonics.

AB - Optical properties of InGaN/GaN multi-quantum-well (MQWs) grown on sapphire and on Si(111) are reported. The tensile strain in the MQW on Si is shown to be beneficial for indium incorporation and Quantum-confined Stark Effect reduction in the multi-quantum wells. Raman spectroscopy reveals compressive strains of -0.107% in MQW on sapphire and tensile strain of +0.088% in MQW on Si. Temperature-dependent photoluminescence shows in MQW on sapphire a strong (30 meV peak-to-peak) S-shaped wavelength shift with decreasing temperature (6 K to 300K), whereas MQW on Si luminescence wavelength is stable and red-shifts monotonically. Micro-photoluminescence mapping over 200 by 200 μm2 shows the emission wavelength spatial uniformity of MQW on Si is 2.6 times higher than MQW on sapphire, possibly due to a more uniform indium incorporation in the multi-quantum-wells as a result of the tensile strain in MQW on Si. A positive correlation between emission energy and intensity is observed in MQW on sapphire but not in those on Si. Despite the lower crystal quality of MQW on Si revealed by atomic force microscopy, it exhibits a higher internal quantum efficiency (IQE) than MQW on sapphire from 6 K to 250 K, and equalizes at 300 K. Overall, MQW on Si exhibits a high IQE, higher wavelength spatial uniformity and temperature stability, while providing a much more scalable platform than MQW on sapphire for next generation integrated photonics.

KW - AlGaN buffer layer

KW - IQE

KW - Indium incorporation

KW - MOCVD

KW - MQW

KW - Quantum confined stark effect

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=85065769428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065769428&partnerID=8YFLogxK

U2 - 10.1117/12.2506426

DO - 10.1117/12.2506426

M3 - Conference contribution

AN - SCOPUS:85065769428

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices XIV

A2 - Schwarz, Ulrich T.

A2 - Morkoc, Hadis

A2 - Fujioka, Hiroshi

PB - SPIE

ER -