Suppression of buoyancy in a prototypical CVD reactor by geometry modification

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Buoyancy plays a detrimental role in chemical vapor deposition reactors employed for thin film deposition. Buoyancy driven fluid flow causes complex flow patterns which alter the transport of the precursor gases to the substrate, and leads to nonuniform deposition patterns. Consequently, many CVD reactors operate under low pressure to mitigate these flow patterns. However, the growth rates at such pressures are relatively low. Operating a CVD reactor under vacuum conditions is also inconvenient because of the associated hardware that is required. In the present work, we have numerically explored the performance of a new type of stagnation flow CVD reactor at pressures close to atmospheric pressure. The new geometry resembles that of a pancake reactor, but the gases are supplied through a long vertical inlet. The annular wall above the substrate is maintained at a low temperature to avoid deposition on this surface. The substrate is also rotated to improve the hydrodynamic patterns and provide azimuthal symmetry. We report results of a number of high-resolution calculations in this reactor to demonstrate its merits for operation at sub-atmospheric and atmospheric pressures. It is shown that the growth rate is significantly large, in addition to a high degree of film uniformity.

Original languageEnglish (US)
Title of host publicationProceedings of the 2003 ASME Summer Heat Transfer Conference, Volume 3
Number of pages9
StatePublished - 2003
Event2003 ASME Summer Heat Transfer Conference (HT2003) - Las Vegas, NV, United States
Duration: Jul 21 2003Jul 23 2003


Other2003 ASME Summer Heat Transfer Conference (HT2003)
Country/TerritoryUnited States
CityLas Vegas, NV

ASJC Scopus subject areas

  • General Engineering


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