Abstract
In situ epitaxial growth of BiSrCaCuO films by three target sputtering was performed on MgO substrates at a temperature of 650°C. From high resolution transmission electron microscopy, the film showed a superstructure consisting of the alternate stacking of the low-Tc and high-Tc phases with a c-axis of 34 A. The film in the [110] or [11̄0] directions was parallel to <100>MgO, and the transient layers between the substrate and the film were less than a few atomic layers thick. X-ray diffraction simulations indicated that the films contained random layer ordering of 34 A bi-layers (low-Tc + high-Tc and high-Tc + low-Tc) and random layer ordering of low-Tc and high-Tc phase layers.
Original language | English (US) |
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Pages (from-to) | L1638-L1641 |
Journal | Japanese Journal of Applied Physics |
Volume | 29 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1990 |
Externally published | Yes |
Keywords
- BiSrCaCuO
- Sputtering
- Superconductor
- Superlattice
- Thin film
- Transmission electron microscopy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)