Superconductive proximity-effects in Nb on InGaAs-based heterostructures

L. H. Greene, A. Kastalsky, J. B. Barner, R. Bhat

Research output: Contribution to journalArticlepeer-review


Experimental data on proximity-effects in Nb on InGaAs-based heterostructures are presented. The thickness of the top InGaAs layer is varied and superconducting parameters of this proximity-induced superconducting layer are determined by tunneling spectroscopy across a InGaAs/InP/InGaAs heterostructure. Penetration of Cooper pairs through a thinned Schottky barrier at the Nb/InGaAs interface is directly evidenced by separate experiments of lateral geometry. Extending our research into proximity-induced SIN→SIS′ Josephson junction tunneling with other semiconductors and metals is discussed.

Original languageEnglish (US)
Pages (from-to)1573-1574
Number of pages2
JournalPhysica B: Condensed Matter
StatePublished - 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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