Abstract
Experimental data on proximity-effects in Nb on InGaAs-based heterostructures are presented. The thickness of the top InGaAs layer is varied and superconducting parameters of this proximity-induced superconducting layer are determined by tunneling spectroscopy across a InGaAs/InP/InGaAs heterostructure. Penetration of Cooper pairs through a thinned Schottky barrier at the Nb/InGaAs interface is directly evidenced by separate experiments of lateral geometry. Extending our research into proximity-induced SIN→SIS′ Josephson junction tunneling with other semiconductors and metals is discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1573-1574 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 165-166 |
| DOIs | |
| State | Published - 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering