Experimental data on proximity-effects in Nb on InGaAs-based heterostructures are presented. The thickness of the top InGaAs layer is varied and superconducting parameters of this proximity-induced superconducting layer are determined by tunneling spectroscopy across a InGaAs/InP/InGaAs heterostructure. Penetration of Cooper pairs through a thinned Schottky barrier at the Nb/InGaAs interface is directly evidenced by separate experiments of lateral geometry. Extending our research into proximity-induced SIN→SIS′ Josephson junction tunneling with other semiconductors and metals is discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering