Super-Low-Noise Performance of Direct-Ion-Implanted 0.25-μmGate GaAs MESFET's

Milton Feng, J. Laskar, J. Kruse

Research output: Contribution to journalArticle

Abstract

We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.

Original languageEnglish (US)
Pages (from-to)241-243
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number5
DOIs
StatePublished - May 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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