Super-Low-Noise Performance of Direct-Ion-Implanted 0.25-μmGate GaAs MESFET's

Milton Feng; J. Laskar; J. Kruse

doi:10.1109/55.145040

Super-Low-Noise Performance of Direct-Ion-Implanted 0.25-μmGate GaAs MESFET's

Milton Feng, J. Laskar, J. Kruse

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.

Original language	English (US)
Pages (from-to)	241-243
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/55.145040
State	Published - May 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.145040

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title = "Super-Low-Noise Performance of Direct-Ion-Implanted 0.25-μmGate GaAs MESFET's",

abstract = "We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.",

author = "Milton Feng and J. Laskar and J. Kruse",

note = "Funding Information: Manuscript received December 27, 1991; revised February 11, 1992. This work was supported by the National Science Foundation under Grant ECD 89-43 166 and the Northrop Corporation. The authors are with the Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9108170.",

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AU - Feng, Milton

AU - Laskar, J.

AU - Kruse, J.

N1 - Funding Information: Manuscript received December 27, 1991; revised February 11, 1992. This work was supported by the National Science Foundation under Grant ECD 89-43 166 and the Northrop Corporation. The authors are with the Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9108170.

PY - 1992/5

Y1 - 1992/5

N2 - We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.

AB - We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.

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JO - IEEE Electron Device Letters

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Super-Low-Noise Performance of Direct-Ion-Implanted 0.25-μmGate GaAs MESFET's

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