We report on advanced ion implantation GaAs MESFET technology using a 0.25-μm “T” gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25 x 200-μm-gate GaAs MESFET's achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% IDSS and 0.6-dB noise figure with 16.5-dB associated gain at 100% IDSS at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMT's and AlGaAs/InGaAs/GaAs pseudomorphic HEMT's.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering