Abstract
We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc-Si:H/a-Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc-Si:H formation and observe several effects. Initially, H penetrates ∼45 Å into the a-Si:H substrate and increases its hydrogen content. Then ∼55 Å of hydrogen-rich a-Si:H deposits. Finally, μc-Si:H nucleates on top of this ∼100 Å thick, high H-content a-Si:H interface layer. As μc-Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 Å; the void fraction in the μc-Si:H layer is always ≤15 vol %, ruling out the possibility that the a-Si:H is etched away. These results suggest that a-Si:H can be transformed into μc-Si:H in a subsurface region under appropriate conditions.
Original language | English (US) |
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Pages (from-to) | 1769-1771 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 14 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)