We describe a comprehensive study of the properties of both ordered and random alloy Ga1-xMnxAs grown on (001), (311), (201), and (110) GaAs substrates. Magnetization measurements show a systematic variation in the Curie temperature with epitaxial orientation in both types of samples, even for the same average Mn concentrations. Electrical characterization and thermal annealing of the random alloy Ga1-xMnxAs samples suggest that the density of As antisite defects depends on the growth surface, providing an extrinsic origin for the observed dependence of Curie temperature on substrate orientation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)