Substrate independent distributed bragg reflector and formation method

Keh-Yung (Norman) Cheng (Inventor), Kuang-Chien Hsieh (Inventor), Kuo-Lih Chang (Inventor), David E Wohlert (Inventor), Hung-Cheng Lin (Inventor), John Epple (Inventor)

Research output: Patent


Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.
Original languageEnglish (US)
U.S. patent number6599564
Filing date8/9/00
StatePublished - Jul 29 2003


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