Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

Walid Hafez; Jie Wei Lai; Milton Feng

doi:10.1109/LED.2003.812530

Submicron InP-InGaAs single heterojunction bipolar transistors with f_T of 377 GHz

Walid Hafez
, Jie Wei Lai
, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency f_T of 377 GHz with a simultaneous maximum power gain cutoff frequency f_MAX of 230 GHz at the current density Jc of 650 kA/cm². Typical BV_CEO values exceed 3.7 V.

Original language	English (US)
Pages (from-to)	292-294
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	5
DOIs	https://doi.org/10.1109/LED.2003.812530
State	Published - May 2003

Keywords

Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.812530

Library availability

Discover UIUC Full Text

Cite this

@article{3da523557e3a48b5a364f910a21fb6ff,

title = "Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz",

abstract = "Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fMAX of 230 GHz at the current density Jc of 650 kA/cm2. Typical BVCEO values exceed 3.7 V.",

keywords = "Heterojunction bipolar transistors (HBTs)",

author = "Walid Hafez and Lai, \{Jie Wei\} and Milton Feng",

year = "2003",

month = may,

doi = "10.1109/LED.2003.812530",

language = "English (US)",

volume = "24",

pages = "292--294",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

AU - Hafez, Walid

AU - Lai, Jie Wei

AU - Feng, Milton

PY - 2003/5

Y1 - 2003/5

N2 - Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fMAX of 230 GHz at the current density Jc of 650 kA/cm2. Typical BVCEO values exceed 3.7 V.

AB - Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fMAX of 230 GHz at the current density Jc of 650 kA/cm2. Typical BVCEO values exceed 3.7 V.

KW - Heterojunction bipolar transistors (HBTs)

UR - https://www.scopus.com/pages/publications/0041530310

UR - https://www.scopus.com/pages/publications/0041530310#tab=citedBy

U2 - 10.1109/LED.2003.812530

DO - 10.1109/LED.2003.812530

M3 - Article

AN - SCOPUS:0041530310

SN - 0741-3106

VL - 24

SP - 292

EP - 294

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -