Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fMAX of 230 GHz at the current density Jc of 650 kA/cm2. Typical BVCEO values exceed 3.7 V.
- Heterojunction bipolar transistors (HBTs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering