Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

Walid Hafez, Jie Wei Lai, Milton Feng

Research output: Contribution to journalArticle

Abstract

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 × 16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fMAX of 230 GHz at the current density Jc of 650 kA/cm2. Typical BVCEO values exceed 3.7 V.

Original languageEnglish (US)
Pages (from-to)292-294
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number5
DOIs
StatePublished - May 1 2003

Keywords

  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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