Submicron-Gate Ion-Implanted In0.15Ga0.85As/GaAs MESFETs with Graded Indium Composition

G. W. Wang, M. Feng, R. Kaliski, J. B. Kuang

Research output: Contribution to journalArticlepeer-review


0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies fts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.

Original languageEnglish (US)
Pages (from-to)190-191
Number of pages2
JournalElectronics Letters
Issue number3
StatePublished - Jan 1990
Externally publishedYes


  • Field effect devices
  • Gallium arsen
  • Indium compound
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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