Submicron-Gate Ion-Implanted In0.15Ga0.85As/GaAs MESFETs with Graded Indium Composition

G. W. Wang; M. Feng; R. Kaliski; J. B. Kuang

doi:10.1049/el:19900128

Submicron-Gate Ion-Implanted In_0.15Ga_0.85As/GaAs MESFETs with Graded Indium Composition

G. W. Wang, M. Feng, R. Kaliski, J. B. Kuang

Research output: Contribution to journal › Article › peer-review

Abstract

0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In_0.15Ga_0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies f_ts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.

Original language	English (US)
Pages (from-to)	190-191
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1049/el:19900128
State	Published - Jan 1990
Externally published	Yes

Keywords

Field effect devices
Gallium arsen
Indium compound
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19900128

Library availability

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Cite this

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title = "Submicron-Gate Ion-Implanted In0.15Ga0.85As/GaAs MESFETs with Graded Indium Composition",

abstract = "0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies fts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.",

keywords = "Field effect devices, Gallium arsen, Indium compound, Semiconductor devices and materials",

author = "Wang, {G. W.} and M. Feng and R. Kaliski and Kuang, {J. B.}",

year = "1990",

month = jan,

doi = "10.1049/el:19900128",

language = "English (US)",

volume = "26",

pages = "190--191",

journal = "Electronics Letters",

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T1 - Submicron-Gate Ion-Implanted In0.15Ga0.85As/GaAs MESFETs with Graded Indium Composition

AU - Wang, G. W.

AU - Feng, M.

AU - Kaliski, R.

AU - Kuang, J. B.

PY - 1990/1

Y1 - 1990/1

N2 - 0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies fts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.

AB - 0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies fts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.

KW - Field effect devices

KW - Gallium arsen

KW - Indium compound

KW - Semiconductor devices and materials

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