Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida; M. Arafa; K. Ismail; J. O. Chu; B. S. Meyerson

doi:10.1016/S0167-9317(96)00088-3

Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida
, M. Arafa
, K. Ismail
, J. O. Chu
, B. S. Meyerson

Research output: Contribution to journal › Article › peer-review

Abstract

Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si_0.7Ge_0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency f_T of 70 GHz was obtained for 0.1 μm gate-length devices.

Original language	English (US)
Pages (from-to)	257-260
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00088-3
State	Published - Feb 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(96)00088-3

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title = "Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications",

abstract = "Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.",

author = "I. Adesida and M. Arafa and K. Ismail and Chu, \{J. O.\} and Meyerson, \{B. S.\}",

note = "The authors gratefully acknowledge C. Youtsey for technical assistance. This work was supported at the university of Illinois under JSEP Grant N00014-96-1-0129, and NSF ECD 89-43166.",

year = "1997",

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doi = "10.1016/S0167-9317(96)00088-3",

language = "English (US)",

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pages = "257--260",

journal = "Microelectronic Engineering",

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T1 - Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

AU - Adesida, I.

AU - Arafa, M.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

N1 - The authors gratefully acknowledge C. Youtsey for technical assistance. This work was supported at the university of Illinois under JSEP Grant N00014-96-1-0129, and NSF ECD 89-43166.

PY - 1997/2

Y1 - 1997/2

N2 - Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

AB - Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

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U2 - 10.1016/S0167-9317(96)00088-3

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

Abstract

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