Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida, M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalArticlepeer-review


Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

Original languageEnglish (US)
Pages (from-to)257-260
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Feb 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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