Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida; M. Arafa; K. Ismail; J. O. Chu; B. S. Meyerson

doi:10.1016/S0167-9317(96)00088-3

Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida, M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson

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Abstract

Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si_0.7Ge_0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency f_T of 70 GHz was obtained for 0.1 μm gate-length devices.

Original language	English (US)
Pages (from-to)	257-260
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00088-3
State	Published - Feb 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(96)00088-3

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title = "Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications",

abstract = "Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.",

author = "I. Adesida and M. Arafa and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.}",

note = "Funding Information: The authors gratefully acknowledge C. Youtsey for technical assistance. This work was supported at the university of Illinois under JSEP Grant N00014-96-1-0129, and NSF ECD 89-43166.",

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doi = "10.1016/S0167-9317(96)00088-3",

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T1 - Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

AU - Adesida, I.

AU - Arafa, M.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

N1 - Funding Information: The authors gratefully acknowledge C. Youtsey for technical assistance. This work was supported at the university of Illinois under JSEP Grant N00014-96-1-0129, and NSF ECD 89-43166.

PY - 1997/2

Y1 - 1997/2

N2 - Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

AB - Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

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Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

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